| 摘要 |
A semiconductor device comprises a level shifting circuit that can be achieved without using an extra charge pump and using low voltage transistors. The level shifting circuit 10 controls the on/off state of a transfer gate, which is an n-channel transistor N1. The level shifting circuit 10 has a NAND gate 11 to which the voltage mode selection signal HVON and input signal IN are given; the p-channel transistor P2, the n-channel transistor N4, and the n-channel transistor N6 series connected between the NAND gate 11 output and the -9V charge pump output Vncp; a NAND gate 13 to which the voltage mode selection signal HVON is input, and input signal IN is input through inverter 12; and the p-channel transistor P3, the n-channel transistor N5, and the n-channel transistor N7 series connected between the NAND gate 13 output and the charge pump output Vncp.
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