| 摘要 |
A chamber cleaning method of a CVD apparatus is provided, which decreases the cleaning time and increases the throughput of a CVD process. A desired film of a metal or metal compound has been formed on a semiconductor substrate placed in a reaction chamber of the CVD apparatus through a reducing decomposition reaction of a source gas. The source gas is a metal halide gas containing a metal element of the desired film. An undesired film of a same metal or metal compound as the desired film has been formed on an inner exposed surface of the chamber in addition to the desired film formed on the substrate. First, (a) the semiconductor substrate on which the desired film has been formed is taken out of the reaction chamber of the CVD apparatus. Next, (b) a cleaning gas having an etching action and a diluting gas are introduced into the reaction chamber of the CVD apparatus after the step (a), thereby removing the undesired film from the inner exposed surface of the reaction chamber by the etching action of the cleaning gas. The cleaning gas is a metal halide gas containing the metal element of the desired film. An etch residue is generated in the reaction chamber by etching the undesired film. Finally, (c) the cleaning gas and the diluting gas introduced into the reaction chamber of the CVD apparatus are evacuated from the chamber together with the etch residue.
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