| 摘要 |
A semiconductor device capable of the area reduction of a resistor. A semiconductor substrate having a first conductive region is prepared. A dielectric layer is formed to cover the first conductive region. The dielectric layer has a contact hole formed to vertically penetrate the dielectric layer. The first conductive region is exposed from the dielectric layer in the contact hole. A semiconductor plug is formed to fill the contact hole with a material of the plug. The plug is doped with an impurity. The bottom of the plug is contacted with the first conductive region. A second conductive region is selectively formed to cover the semiconductor plug. The second conductive region is contacted with the top of the semiconductor plug. The semiconductor plug has a resistance. The semiconductor plug and the second conductive region has a contact resistance. The semiconductor plug and the second conductive region serve as a resistor having a resistance equal to the sum of the resistance of the semiconductor plug and the contact resistance. Preferably, the resistance of the second conductive region is equal to or less than ({fraction (1/10)}) of the contact resistance of the semiconductor plug and the second conductive layer.
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