| 摘要 |
In a memory cell section of a memory cell array in a semiconductor memory, N+ diffused layers and gate electrode conductors are located with the same line width and with an equal spacing. In a selector section, the N+ diffused layers and the gate electrode conductors are not located with an equal spacing. However, a dummy N+ diffused layer is added to an end of the N+ diffused layer in the selector section. In addition, a dummy N+ diffused layer is additionally located in a region which had existed as an empty region corresponding to the N+ diffused layer in the memory cell section. Thus, a resist pattern for the N+ diffused layers is formed as a designed pattern, and the characteristics of memory cell transistors or selector transistors is homogenized.
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