| 发明名称 |
Pad etch process capable of thick titanium nitride arc removal |
| 摘要 |
A method of pad etch which removes an anti-reflective coating over a conductor in an integrated circuit is disclosed herein. The method includes providing a mask layer, stabilizing the mask layer, and providing a high temperature etch to remove the anti-reflective coating.
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| 申请公布号 |
US6177355(B1) |
申请公布日期 |
2001.01.23 |
| 申请号 |
US19990387122 |
申请日期 |
1999.08.31 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
SHIELDS JEFFREY A.;ANDERSON MARK |
| 分类号 |
H01L21/027;H01L21/3213;(IPC1-7):H01L21/00 |
主分类号 |
H01L21/027 |
| 代理机构 |
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