| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for growing a group III to V element compound semiconductor in a gas phase by which even a crystal layer having a short growth time, such as a spacer layer, can be grown in a uniform thin film thickness. SOLUTION: This method for growing a group III to V element compound semiconductor in a gas phase comprises holding substrates 1 to 4 for growing the semiconductor crystals on a susceptor 5, heating and rotating the susceptor 5, and supplying raw material gases and a dilution gas on the substrates 1 to 4. Therein, one crystal layer is grown with two growth periods, and the growth-starting time is shifted only odd times a time for the half rotation of the susceptor 5.
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