| 摘要 |
A method of fabricating a thin film transistor (TFT) for a liquid crystal display (LCD) device having a drive circuit and a pixel array formed on the same substrate. The method includes forming a polycrystalline silicon layer by growing silicon grains from an amorphous silicon layer using the technique of sequential lateral solidification so that the silicon grains are oriented in a first direction, forming an active layer by patterning the polycrystalline layer, the active layer defining channel directions of the TFTs which are inclined at a predetermined angle with respect to the first direction, and forming the TFTs on the active layer. The method enhances the uniformity of the physical characteristics of the TFTs formed on the substrate.
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