| 摘要 |
PROBLEM TO BE SOLVED: To provide a plating method and a plating liquid by electroless plating, which is capable of forming a high quality film using copper on a part having large aspect ratio such as a connection hole of a semiconductor device. SOLUTION: At the time of electroless plating of copper on a barrier layer 5 formed on the surface of the connection hole 6, a salt of a metal such as gold, nickel, palladium, cobalt and platinum is added as a plating accelerating agent in the quantity of <=1 mol% to the salt of copper in the electroless plating liquid composition. As a result, a metal having higher catalytic ability than that of copper is deposited before the deposition of copper and then, copper is deposited as the high quality plated film.
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