METHOD AND DEVICE FOR CLEANING REACTION CHAMBER

摘要

PROBLEM TO BE SOLVED: To reduce damages to each part in a reaction chamber caused by, plasma, and to enable the uniform cleaning. SOLUTION: In a plasma CVD device to introduce a treatment gas into a reaction chamber 1 and form a film on a substrate 3 using the treatment gas, a plasma generation unit 14 is provided on introduction piping 15 to introduce the cleaning gas in the reaction chamber 1, the cleaning gas is activated by the plasma generated in a plasma generation unit 14 during a spare time to form the film on the substrate, and the activated cleaning gas is introduced in the reaction chamber 1 to clean the inside of the reaction chamber 1.