发明名称 Method of manufacturing a semiconductor device with a pair of radiating terminals and a plurality of lead terminals formed from a single lead frame
摘要 A semiconductor device is disclosed wherein a pair of radiating terminals and a plurality of lead terminals are formed from a single lead frame. A hole or holes in each radiating terminal are formed with an equal width and in an equal pitch to those of gaps between the lead terminals, and the opposite sides of each hole of the radiating terminal are connected to each other by a support element. The support elements of the radiating terminals and support elements which interconnect the lead terminals are formed with an equal length and in an equal pitch to allow the support elements to be cut away by a plurality of punches which are arranged in an equal pitch and have an equal width.
申请公布号 US6177720(B1) 申请公布日期 2001.01.23
申请号 US19990439810 申请日期 1999.11.12
申请人 NEC CORPORATION 发明人 ICHIKAWA SEIJI;UMEMOTO TAKESHI;NISHIBE TOSHIAKI;SATO KAZUNARI;TSUBOTA KUNIHIKO;SUGA MASATO;NISHIMURA YOSHIKAZU;OKAHIRA KEITA;MIYA TATSUYA;KITAKOGA TORU;TAHARA KAZUHIRO
分类号 H01L23/50;H01L23/495;(IPC1-7):H01L23/495 主分类号 H01L23/50
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