| 摘要 |
A non-volatile memory cell is provided that includes a low voltage CMOS storage transistor having a source region and a drain region that are commonly connected to ground. The low voltage storage transistor is programmed by applying a high programming voltage to its gate, thereby rupturing the gate oxide of the storage transistor. The high programming voltage is applied to the low voltage storage transistor through a high voltage p-channel transistor. The high voltage p-channel transistor has a thicker gate oxide than the storage transistor, thereby enabling the p-channel transistor to withstand higher voltages. The high voltage p-channel transistor also has a higher breakdown voltage than a high voltage n-channel transistor of the same size. Both the low voltage storage transistor and the high voltage p-channel transistor are fabricated in accordance with a standard sub 0.35 micron process. The state of the low voltage storage transistor can be read through the p-channel transistor, or through a dedicated high voltage n-channel transistor. In one embodiment, the programming voltage is generated by a charge pump circuit fabricated in accordance with a standard sub 0.35 micron process. In another embodiment, the decoder circuits that access the non-volatile memory cell use high voltage p-channel transistors to transmit the high programming voltage. Another embodiment of the present invention includes a system-on-a-chip structure that implements the non-volatile memory of the present invention.
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