Method of forming polycide

摘要

The method of forming a polycide that includes the steps of forming an insulating layer on a substrate, forming a first semiconductor layer on the insulating layer and forming a metal-ion buried layer in the first semiconductor layer; wherein the metal-ion buried layer is formed to be located to a predetermined depth from an upper surface of the first semiconductor layer. An impurity-ion buried layer is formed under the metal-ion buried layer in the first semiconductor layer such that the impurity-ion buried layer makes the first conductive layer electrically-conductive. A silicide layer and a conductive second semiconductor layer are formed by carrying out thermal treatment on the metal-ion buried layer and the impurity-ion buried layer.