发明名称 |
Method of silicide film formation onto a semiconductor substrate |
摘要 |
A method of depositing metal silicide onto a semiconductor substrate includes a step of depositing, by a CVD process, a first metal silicide layer with silane gas onto the semiconductor substrate. The method also includes a step of thermally treating and chemically cleaning the semiconductor substrate. The method further includes a step of depositing, by the CVD process, a second metal silicide layer with silane gas onto the semiconductor substrate. By this method, cracks in the metal silicide formed on the semiconductor substrate are minimized.
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申请公布号 |
US6177345(B1) |
申请公布日期 |
2001.01.23 |
申请号 |
US19980080405 |
申请日期 |
1998.05.18 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
MORALES GUARIONEX;WANG JIANSHI;RIZZUTO JUDITH Q.;FANG HAO |
分类号 |
H01L21/285;H01L21/3205;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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