| 摘要 |
PROBLEM TO BE SOLVED: To obtain an aluminum nitride substrate having a high thermal conductivity, a sufficiently high adhesion strength of an electroconductive layer formed on the surface to an aluminum nitride sintered compact and a slight warpage of the whole substrate. SOLUTION: This aluminum nitride substrate has an electroconductive layer comprising a high-melting metal such as tungsten on the surface of an aluminum nitride sintered compact and >=190 W/mK thermal conductivity of the substrate and >=5.0 kgf adhesion strength of the electroconductive layer to the aluminum nitride sintered compact. The method for producing the aluminum nitride substrate comprises degreasing an electroconductive paste formed compact prepared by forming a layer of the electroconductive paste comprising 100 pts.wt. of the high-melting metal powder having 0.8-5μm average particle diameter and 11-20 pts.wt. of an aluminum nitride powder on the surface of an aluminum nitride formed compact comprising an aluminum nitride powder, a sintering aid and an organic binder within the range of 800-2,500 pm residual carbon ratio, then baking the resultant formed compact at 1,200-1,700 deg.C temperature and subsequently baking the obtained compact at 1,800-1,900 deg.C temperature.
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