PROGRAMMABLE READ-ONLY MEMORY WITH IMPROVED FETCH TIME

摘要

electrically erasable read-only memories. SUBSTANCE: device has memory transistor, choice transistor, bit bus, word bus, facility (FSU) meant to shape readout voltage depending on clock-signal frequency. Electrically erasable read-only memory enables unambiguous reading of data at any fetch time. EFFECT: enhanced erasing speed. 4 cl, 4 dwg