SEMICONDUCTOR LASER DEVICE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor laser device and a manufacturing method thereof are provided to enhance the focusing efficiency of current by shielding the flow of current through a schottky barrier. CONSTITUTION: A channel stripe of recessed shape having a flat bottom and inclined portions is formed on a substrate(11). A lower clad layer(12), an activation layer(13) and an upper clad layer(14) are sequentially formed on the substrate while maintaining the recessed shape. A cap layer(15) is filled in the recess of the upper clad layer for ohmic contact. A metal electrode layer(17) is formed on the cap layer and the exposed upper clad layer, and forms a schottky barrier at a contact surface with the upper clad layer.