| 摘要 |
PROBLEM TO BE SOLVED: To constitute terminal of a semiconductor element which has a layer where the potential floats, without deterioration in breakdown strength by forming a trench or the like at the terminal of a chip. SOLUTION: A trench structure 10 is used for a terminal in a super-FET structure. Hereby, termination of upper and middle doping layers can be performed at the same time, and the effective area of the element within an element becomes large, and the making into an IC also becomes possible. That is, the terminal of the middle doping layer can be taken surely within an area smaller than the case where a guard ring is used, and the effect equal to the bevel structure can be obtained by separation at chip level. |
