发明名称 |
WRITE-IN OPERATION MASKING METHOD FOR SYNCHRONOUS MEMORY AND DEVICE THEREFOR |
摘要 |
PROBLEM TO BE SOLVED: To mask a write-in operation by the control of a mask information signal with respect to a device for masking the write-in operation of a synchronous memory. SOLUTION: A write-in mask information signal WRMSK- is applied to the central column selection circuit element 42 in a memory circuit. When the write-in mask information signal has contents that a present write-in operation is to be masked, the writing of data in memory cells 30 in the memory circuit is stopped by invalidating a column selection signal line with the column selection circuit element 42. When the write-in mask information signal has contents that a present write-in operation is not to be masked, data are written in proper memory cells in the memory circuit by the conventional method. When the write-in mask information signal has contents that the present write-in operation is to be masked, the column selection circuit element 42 invalidates a redundant column selection signal line.
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申请公布号 |
JP2001014849(A) |
申请公布日期 |
2001.01.19 |
申请号 |
JP20000105024 |
申请日期 |
2000.04.06 |
申请人 |
GENESIS SEMICONDUCTOR INC |
发明人 |
HAUKNESS BRENT S;SAASHA PURAKASSHU KAGINEERU;BAIPURU PEITORU |
分类号 |
G11C11/407;G11C29/00;G11C29/04;(IPC1-7):G11C11/407 |
主分类号 |
G11C11/407 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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