发明名称 WRITE-IN OPERATION MASKING METHOD FOR SYNCHRONOUS MEMORY AND DEVICE THEREFOR
摘要 PROBLEM TO BE SOLVED: To mask a write-in operation by the control of a mask information signal with respect to a device for masking the write-in operation of a synchronous memory. SOLUTION: A write-in mask information signal WRMSK- is applied to the central column selection circuit element 42 in a memory circuit. When the write-in mask information signal has contents that a present write-in operation is to be masked, the writing of data in memory cells 30 in the memory circuit is stopped by invalidating a column selection signal line with the column selection circuit element 42. When the write-in mask information signal has contents that a present write-in operation is not to be masked, data are written in proper memory cells in the memory circuit by the conventional method. When the write-in mask information signal has contents that the present write-in operation is to be masked, the column selection circuit element 42 invalidates a redundant column selection signal line.
申请公布号 JP2001014849(A) 申请公布日期 2001.01.19
申请号 JP20000105024 申请日期 2000.04.06
申请人 GENESIS SEMICONDUCTOR INC 发明人 HAUKNESS BRENT S;SAASHA PURAKASSHU KAGINEERU;BAIPURU PEITORU
分类号 G11C11/407;G11C29/00;G11C29/04;(IPC1-7):G11C11/407 主分类号 G11C11/407
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