| 摘要 |
PROBLEM TO BE SOLVED: To prevent the generation of smears by obviating partial thinning of light-shield films on both side face of a polysilicon electrode for transfer and obtaining an accurate signal output by installing the transfer electrode for transferring charges to a charge transfer section and forming the shape of the transfer electrode into a tapered shape, where a lower section is widened and an upper section is narrowed. SOLUTION: A polysilicon electrode 2-1 is formed into a tapered shape with a lower section widened and an upper section narrowed. Accordingly, the coverage of a light-shielding film 3 can be improved, the thickness of the light- shielding film 3 is ensured at a fixed value or higher, and the transmission of light can be prevented particularly on the boundary of a transfer section 2 and a light-receiving section 1. Consequently, a dark level can be captured accurately. Light is transmitted at the boundary of the transfer section 2 and the light-receiving section 1 and the generation of smears can be prevented by also tapering a polysilicon electrode 2-1 successively in an effective section 4.
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