| 摘要 |
PROBLEM TO BE SOLVED: To reduce the number of manufacturing processes of a double-surface polished wafer by omitting a primary polishing process, by removing impurity contaminants which are apt to occur during heat treatment from the surface of the wafer by polishing both surfaces of the wafer after a heat-treating process. SOLUTION: After a wafer which is subjected to primary both-surface grinding or light lapping, finish both-surface polishing, and cleaning is conducted in white heat treatment(WHT) both surfaces of the wafer are polished. Then, after the outer peripheral section of the both-surface polished water is subjected to PCR processing, one surface of the wafer is finish-polished. When the wafer is polished in the above-mentioned way, the impurity contaminants which occur during WHT heat treatment can be removed from both surfaces of the wafer by the both-surface polishing which is performed after the WHT heat-treating process. Consequently, the primary polishing process which is considered to be an indispensable condition in the conventional method in which the WHT heat treatment is performed after both-surface polishing can be omitted. Therefore, the number of manufacturing processes of the wafer can be reduced.
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