| 摘要 |
PROBLEM TO BE SOLVED: To realize a trench structure, having a low stationary loss while maintaining the same load short resistance as that of the conventional planar, even structure if making cells are made fine in a trench IGBT. SOLUTION: This device comprises p+-type base regions 12 on a surface layer at n-layer collector regions 11, n+-type source regions 13 selectively formed on its surface layer, a gate insulating film 14 formed on the inner walls of trenches formed at deeps piercing the base regions and a substrate surface, trench gate electrodes 15 embedded in the trenches, a layer insulating film 16, and surface emitter electrodes 17 contacting in common with the source and base regions through the openings of the layer insulating film and the gate insulating film below it. The source regions are interposed between the adjacent trench gate electrodes in parallel directions thereto and contact the gate insulating film at the trench inner walls.
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