| 摘要 |
PROBLEM TO BE SOLVED: To prevent electromagnetic interference due to an electric signal and enable each transistor element to perform amplification, etc., precisely by providing an outer circumferential part of each transistor element with a wiring part to be electrically connected to a ground part. SOLUTION: An outer circumferential part of transistor elements 16a, 16b of a semiconductor device 30 are coated with a metallic film 31 which is a wiring part at a proper interval, and a first ground layer 31 connected to a ground part of a rear of the semiconductor device 30 through a deep P+ layer 17 is formed. Therefore, an electric signal produced in wirings 19a, 19b, 21a, 21b, etc., of the transistor elements 16a, 16b, etc., is shielded by the first ground layer 31, and mutual electromagnetic interference can be prevented whether amplification function of an electric signal is for a low frequency signal or a high frequency electric signal. Therefore, when a high frequency signal is amplified, obstacle of an amplification signal caused by wave leakage is not produced between the transistor elements 16a, 16b.
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