| 摘要 |
PROBLEM TO BE SOLVED: To improve charge-transfer efficiency in the case of the transfer of a small quantity of charges, and to reduce a fraction defective by forming the trench of potential arranged along the transfer section of a vertical transfer section to a part of the vertical transfer section. SOLUTION: The potential of a part of the vertical transfer sections 6 of the CCD solid-state image pickup device is made deep deliberately, and trenches 6-1 of potential are formed. Charges are transferred by using the trenches 6-1 of potential in the case of a small quantity of signal charges. The positions of the trenches 6-1 of potential are formed at the central sections of the vertical transfer sections 6 taking into consideration the two-dimensional effects of the potential of the vertical transfer sections. Thus, probability of encounters to the defects (that is, positions where potential is deepened partially) of the vertical transfer sections 6 is made smaller than the transfer by using the vertical transfer sections 6 as a whole in transfer by using parts (the trenches) of the vertical transfer sections 6. Accordingly, the defects of the CCD solid-stage image pickup device also decrease due to the deepening of the potential of parts of the vertical transfer sections 6.
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