| 摘要 |
PROBLEM TO BE SOLVED: To avoid increasing the contact resistance or growing open defects, and effectively prevent short circuit, due to downsizing of contact hole diameters. SOLUTION: A manufacturing method comprises the steps of forming conductive films 3, 4 and a first insulating film 5 on a gate oxide film 2 after forming this film 2 on a substrate 1, forming a second insulating film 8 over the entire surface, after etching the first insulation film 5 and the conductive films 3, 4 to form gate electrodes 7, etching a third insulating film 9 with the second insulating film 8 used as an etching stopper to open contact holes 12 between the gate electrodes 7, after forming the third insulating film 9 on the second insulating film 8 by a deposition method while applying a voltage to the substrate 1, and etching the second insulating film 8 exposed at the bottoms of the contact holes 12 and the gate oxide film 2.
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