| 摘要 |
PROBLEM TO BE SOLVED: To elevate breakdown strength, in a superjunction semiconductor element which is equipped with a drift layer, consisting of parallel pn layers letting current flow in on conditions and also being depleted in off conditions. SOLUTION: This superjunction semiconductor element is provided with an n high-resistance region 20, around a drift layer 12 consisting of parallel pn layers composed of n drift regions 12a and p partition regions 12b, and concentration ND of the impurities in the high-resistance region 20 is set at 5.62×1017×VDSS-1.36 (cm-3) or lower. But, VDSS shows breakdown strength (V). Furthermore, an n-channel stopper region adjacent to the high-resistance region 20 is arranged.
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