发明名称 POSITIVE TYPE PHOTORESIST COMPOSITION FOR EXPOSURE WITH FAR ULTRAVIOLET RAY
摘要 PROBLEM TO BE SOLVED: To obtain a positive type photoresist composition excellent in shelf stability of a resist solution by incorporating a compound which generates an acid when irradiated with active light or the like, a resin which contains specified repeating units and is decomposed by the action of the acid to increase its alkali solubility and a specified mixed solvent. SOLUTION: The photoresist composition contains (a) a compound which generates an acid when irradiated with active light or the like, (b) a resin which contains repeating units each containing an alkali-soluble protected with a group containing an alicyclic hydrocarbon structure of formula I or the like and/or repeating units of formula II, formula III or the like and is decomposed by the action of the acid to increase its alkali solubility and (c) a mixed solvent containing propylene glycol monomethyl ether acetate or the like and ethyl lactate or the like. In the formula I, R11 is methyl, ethyl or the like and Z is an atomic group required to form an alicyclic hydrocarbon group together with C. In the formula II, R1 is H, a halogen or the like, X1 is a divalent combining group and Lc is lactone.
申请公布号 JP2001013686(A) 申请公布日期 2001.01.19
申请号 JP19990186607 申请日期 1999.06.30
申请人 FUJI PHOTO FILM CO LTD 发明人 SATO KENICHIRO;KAWABE YASUMASA
分类号 H01L21/027;C08F20/10;G03F7/039 主分类号 H01L21/027
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