| 摘要 |
PROBLEM TO BE SOLVED: To obtain a capacitance-type pressure sensor which is provided with a temperature detecting function and which is small and low-cost by a method wherein a temperature detecting element (a semiconductor thermistor or the like) is formed in the region of a silicon substrate or a glass substrate. SOLUTION: A fixed electrode 36 is formed on a glass substrate 32, and a diaphragm part 33 which is deformed according to a pressure is formed on a silicon substrate 31. The silicon substrate 31 and the glass substrate 32 are bonded, and a cavity part 34 is formed on the lower side of the diaphragm part 33. When a pressure is applied to the diaphragm part 33, the diaphragm part 33 which constitutes a moving electrode is deformed, the gap between the diaphragm part 33 and the fixed electrode 36 is changed, and a capacitance is changed. On the basis of a change in the capacitance, the pressure is detected. Then, a semiconductor thermistor 46 is formed in the upper part of the silicon substrate 31, and the silicon substrate 31 is provided with a function as a temperature detecting element. In addition, the semiconductor thermistor 46 is connected to a thermistor electrode 47 by a metal wiring.
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