| 摘要 |
<p>PROBLEM TO BE SOLVED: To detect incidence position and shape of a line-shaped slip beam with a width by arranging a plurality of one-dimensional regions for detecting light incidence position on the same semiconductor substrate. SOLUTION: An N-type silicon substrate 1 with high resistance is thermally oxidized for forming a silicon oxide film, and an N+ diffusion layer 31 required for separating a P-type diffusion layer 21 for positioning a one-dimensional incidence light position which is arranged in parallel in an array is formed through photoetching and thermal diffusion. Furthermore, a P-type diffusion layer 21' of a high-concentration layer is formed at each two locations of both sides for each P-type diffusion layer 21. Also, the P-type diffusion layer 21 required for detecting a light incidence position is formed through photoetching and ion implantation methods. Then, the reverse side of the N-type silicon substrate is etched, and an N+-type diffusion layer 31 is through thermal diffusion. Finally, an electrode 7 of each diffusion layer is formed.</p> |
