| 摘要 |
PROBLEM TO BE SOLVED: To enable formation of a monolithic microwave integrated circuit reduced in chip size. SOLUTION: A gate electrode 32, a source electrode 33 and a drain electrode 34 are arranged on a semi-insulating substrate 31 to form a transistor cell 35. A multiplicity of such cells 35 are arranged and commonly connected by common source electrodes 36, 37, common drain electrodes 38,39, and common gate electrodes 40, 41. The cell connected to the common gate and drain electrodes 40 and 38 is formed as a first transistor 6, while the cell connected to the common gate and drain electrodes 41 and 39 are formed as a second transistor 7. A channel region 52 having gate electrode 32 brought in a Schottky- contact therewith is not separated by the transistors 6 and 7 and formed as a common continuous region.
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