| 摘要 |
PROBLEM TO BE SOLVED: To completely remove deposits precipitated on the internal wall surface of a reaction chamber, without disassembling a semiconductor wafer treatment device. SOLUTION: In a semiconductor wafer treatment device, a heating means 12 is provided near deposits 11 which are precipitated on the internal wall surface 2a of a reaction chamber 2, so as to heat the deposits 11 from a near distance. A gas (HCl etching gas) 18 for decomposing and removing the deposits 11 is supplied to the reaction chamber 2, and the heated deposits 11 are decomposed and removed from the internal wall surface 2a of the chamber 2 through the chemical reaction, (Si(s)+2HCl(g)SiCl2(g)+H2(g)).
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