| 摘要 |
PROBLEM TO BE SOLVED: To obtain a semiconductor device which can remove unwanted frequency components. SOLUTION: This semiconductor device is equipped with an FET 13, having electrodes G, D, and S and a bias circuit connected to the source electrode S of the FET 13. The bias circuit is composed of two capacitors C1 and C2 each having one end grounded, a transmission line 15 which is connected between the other end terminals of the capacitors C1 and C2, and a resistance 16 which is connected between the other end of the capacitor C2 at a side away from the source electrode S and the ground GND.
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