| 摘要 |
PROBLEM TO BE SOLVED: To improve crack durability of an organic SOG film and restrain increase of relative dielectric constant. SOLUTION: In this manufacturing method, an organic SOG film 12 is formed on a semiconductor substrate 11 by a spreading method, as shown in a figure (a). The semiconductor substrate 11 is mounted on a hot plate 13, heat treatment is performed at 80 deg.C for five minutes and at 200 deg.C for five minutes in atmosphere, and solvent in the organic SOG film 12 is vaporized, as shown in a figure (b). The semiconductor substrate 11 is mounted on the hot plate 13 and heated at 250-350 deg.C for five minutes in atmosphere, as shown in a figure (c). The semiconductor substrate 11 is mounted in a diffusion furnace 14, polymerization reaction is made to progress by heating at 450 deg.C for sixty minutes while N2 gas is made to flow into the diffusion furnace 14, and the organic SOG film 12 is cured, as shown in a figure (d).
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