发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PROBLEM TO BE SOLVED: To suppress defects from occurring due to electromigration, while suppressing the increase of manufacturing cost. SOLUTION: A semiconductor device has W via plugs 106 filled in vias 105 which pierces a second layer insulation film 104, an Al alloy upper wiring 103, a first insulation film 102 and an Al alloy lower wiring 101. The W via plugs 106 are connected to the side face of the upper wiring 103 and cuts off the length of this wiring 103. The plugs 106 are also connected to the side face of the lower wiring 101 and cuts off the length of this wiring 101. The divided Al wirings have a length L which is smaller than the critical length of electromigration.
申请公布号 JP2001015598(A) 申请公布日期 2001.01.19
申请号 JP19990186331 申请日期 1999.06.30
申请人 TOSHIBA CORP 发明人 KAWANOUE TAKASHI;KANEKO HISAFUMI
分类号 H01L21/302;H01L21/28;H01L21/3065;H01L21/3205;H01L21/768;H01L23/522;(IPC1-7):H01L21/768;H01L21/306;H01L21/320 主分类号 H01L21/302
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