| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which prevents boron punch-through at p-type gate electrodes. SOLUTION: This method of manufacturing a semiconductor device, having MOS transistors using polysilicon contg. a p-type impurity additive as gate electrodes, comprises the steps of forming a lower layer 4 of large grain size polysilicon on a substrate 1, forming a buffer layer 5 on the lower layer 4, forming an upper layer 6 of small grain size polysilicon on the buffer layer 5, injecting ions of B or B compd. into the upper layer 6, and patterning the lower layer 4, the buffer layer 5 and the upper layer 6 to form a gate electrode pattern.
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