| 摘要 |
PROBLEM TO BE SOLVED: To suppress the increase of junction leakage currents caused by the defective working of the boundary sections between an element area formed on the bottom face of a contact hole opened between the element separating areas of a semiconductor substrate and the element separating areas, by forming silicon layers for filling up grooves formed in the boundary sections. SOLUTION: After a resist is worked to a desired pattern by photo-etching, a contact hole is opened in the element area between element separating areas 102 by working a silicon oxide film 106, a BPSG film 105, and a silicon nitride film 104 so as to expose a titanium silicide film 103. After the contact hole is opened, a groove formed at the boundary section between the element area and one of the element separating areas 102 is filled up by depositing an amorphous silicon film 107 at a temperature of 550 deg.C by the LPCVD method. Therefore, the increase of junction leakage currents caused by the defective working of the boundary section can be suppressed.
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