| 摘要 |
PROBLEM TO BE SOLVED: To provide a method of manufacturing a partial SOI substrate, whereby complete depletion type MOS transistors can be formed in the SOI structure and silicide process is easy to apply. SOLUTION: This manufacturing method comprises the steps in which trenches are formed into regions on one surface of a first substrate 1 for forming an SOI structure, an oxide film 3 is formed on this substrate 1 and removed to planarized until the substrate 1 surface is exposed, thus forming the first substrate 1 having the partly formed oxide film 3, a planarized second substrate 1a is formed, the structure of the planarized first substrate 1 is pasted to the surface of the second substrate 1a, and a different surface of the first substrate 1 or second substrate 1a from the pasted surface is polished to form an SOI substrate which has a different SOI thickness.
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