| 摘要 |
PROBLEM TO BE SOLVED: To obtain a method by which a fine pattern of nanometer order can be formed at a high aspect ratio by using photolithography. SOLUTION: In a method for forming fine pattern, two resist layers are formed on a substrate 1, by successively applying a first resist film 2 composed of an organic high polymer and a second resist layer 3 composed of a photosensitive material to the substrate 1. Then a mask 4, in which fine metallic patterns 6 are formed on a mask substrate 5 composed of a dielectric substance, such as glass, etc., is closely adhered to the resists of the two layers, and the resists are exposed to a near-field light leaking out from the opening of the mask 4, where no metal is formed by irradiating the rear surface of the glass substrate 5 with the light. Thereafter, a pattern is formed by developing the second resist layer 3 with a developing solution, and a fine pattern having a high aspect ratio is formed by dry-etching the first resist film 2 with an O2 plasma through the use of the pattern of the second resist layer 3 as a mask. After working the substrate 1 through etching, vapor deposition, etc., by using the patterns of the two resist layers 2 and 3, the resists of the layers 2 and 3 are removed. |
