| 摘要 |
PROBLEM TO BE SOLVED: To suppress erroneous writing in a memory transistor of a non-volatile semiconductor memory device. SOLUTION: F(fluorine) is added to an oxide film 22 (silicon oxide film) for forming a isolation region as an impurity. As described above, by adding the impurity, a relative permittivity of the oxide film 22 can be made to be lower than that of the silicon oxide film without adding any impurity. Thus, the erroneous writing due to interference between adjacent memory transistors can be suppressed.
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