| 摘要 |
PROBLEM TO BE SOLVED: To form a conductive line having a sufficient joint strength even on a barrier layer having a poor joint strength by forming an interposed layer formed of a thin layer made of a substance having a high reactivity with nitrogen in the boundary surface between a diffusion inhibition layer and a conductive line. SOLUTION: A copper seed layer 20 is formed in a recessed part 12 in which an interposed layer 18 made of titanium is placed and implanted in a barrier layer 14, and it is used as a power supply layer and it is buried by copper plating and covered with a film, so that a conductive line 22 is formed. The substrate 1 which is filled and covered with a film is heated in a specified atmosphere by using an optimal heating means, and a nitrogen is diffused in a direction from the barrier layer 14 to the pure copper of the conductive line 22 and it is allowed to be reacted in the boundary surface, thereby forming a thin-film compound 24 made of titanium and nitrogen near the boundary surface. Thus, since a joint property between the conductive line and barrier layer is enhanced and strengthened, a conductive line having a sufficient joint strength can be formed even on the barrier layer originally having a poor joint property, and a fine wiring structure can be stably formed in a highly integrated semiconductor device.
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