发明名称 PLASMA TREATMENT APPARATUS
摘要 PROBLEM TO BE SOLVED: To provide a plasma treatment apparatus which can improve the treatment efficiency by continuously treating a long substrate to be treated, while transferring the substrate. SOLUTION: A plasma treatment device is characterized, in that the device is composed of a transfer path 1 for transferring a long substrate A to be treated in its length direction and a treatment chamber 3, which is provided midway along the path 1 and through which the transported substrate A can be passed and continuously treats the substrate A in the chamber 3, by generating plasma in the chamber 3 through introducing a reaction gas to the chamber 3.
申请公布号 JP2001015441(A) 申请公布日期 2001.01.19
申请号 JP19990185130 申请日期 1999.06.30
申请人 TOKYO ELECTRON LTD 发明人 SATOYOSHI TSUTOMU;AMANO KENJI
分类号 H01L21/302;B01J19/08;C23F4/00;H01L21/205;H01L21/3065;(IPC1-7):H01L21/205;H01L21/306 主分类号 H01L21/302
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