| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer which can realize emission of high luminance of a red light emitting diode and high yield in its manufacture from the viewpoint of impurities other than Zn, Te and C, in an epitaxial layer and a light emitting device using the epitaxial wafer. SOLUTION: A single-heterostructure epitaxial wafer comprises a p-type GaAs substrate 1, a p-type GaAlAs active layer 2 which has a mixed crystal ratio of Al, which is necessary to obtain the required emitted light wavelength and is formed on the substrate 1 and an n-type GaAlAs clad layer 3, which is formed on the active layer 2. Oxygen concentration in a boundary between the p-type GaAs substrate 1 and the p-type GaAlAs active layer 2 is set not larger than 5×1017 cm-3. |
