发明名称 FLASH MEMORY
摘要 PROBLEM TO BE SOLVED: To make it compatible with a flash memory on which a conventional error correcting circuit is not mounted by automatically performing error correcting processing inside of a flash memory. SOLUTION: This flash memory is provided with a memory sector, an interface 3 receiving an instruction from the outside and generating a control signal, a circuit 7 activated by a write-in instruction signal and generating a control signal, an error correcting circuit 11 activated by a write-in data input instruction signal, receiving write-in data externally inputted synchronizing with a first signal externally inputted, activated by a write-in instruction, and generating test data synchronizing with a control signal, a circuit provided in each memory cell, taking in write-in data or test data, and storing temporarily it, and circuits 13, 14, 15 activated by a write-in instruction, and writing stored write-in data and test data in the memory sector.
申请公布号 JP2001014888(A) 申请公布日期 2001.01.19
申请号 JP19990181874 申请日期 1999.06.28
申请人 TOSHIBA CORP 发明人 TANAKA TOMOHARU;SHIBATA NOBORU;TANZAWA TORU
分类号 G11C17/00;G06F11/10;G11C16/00;G11C16/06;G11C29/42 主分类号 G11C17/00
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