| 摘要 |
<p>PROBLEM TO BE SOLVED: To continuously change the refractive index of a nonlinear optical characteristic in an intra-surface direction. SOLUTION: An SiO2-GeO2 thin film 16 is formed by vapor deposition on a glass substrate 12. In the stage of the vapor deposition, the thin film 16 is irradiated with ions from an ion source 18. Ion implantation energy is changed by moving a shutter 20 in the intra-surface direction, by which the refractive index of the thin film 16 is continuously changed.</p> |
