| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device with a detection means integrated with a power device and easy of manufacture, which can detect the output voltage quickly and will not cause abnormal voltage or the like. SOLUTION: This semiconductor device is provided with a voltage detecting means, consisting of a p-well region 41, a p+ contact region 61, and an anode electrode 91, in a position Ld apart from a p base region 4 of the IGBT part in the surface layer of an n drift layer 3, and a constant current source 13 is connected to the anode electrode 91, to supply it with a constant current. In this case, a voltage detecting terminal 14 is connected to the junction between the constant current source 13, and the anode electrode 91, and Ld is made 15 μm or longer. |
