| 摘要 |
<p>PROBLEM TO BE SOLVED: To prevent erroneous writing to a nonselected memory cell when data '1' is written to a selected memory cell by reducing the actual threshold voltage. SOLUTION: The nonvolatile semiconductor storage device comprises bit lines BL1 and BL2, a source line SL, and a plurality of serially connected nonvolatile transistors each having a floating gate and a control gate. The device also includes NAND memory cells Mi, j each inserted between the corresponding one of the lines BL1 and BL2 and the line SL, selecting gates S1, 1 and S1, 2 each connected between the corresponding NAND memory cell and the corresponding one of the lines BL1 and BL2, selecting gates S2, 1 and S2, 2 each connected between the corresponding NAND memory cell and the line SL, and resistors R inserted on the way along paths each formed of the NAND memory cells and selecting gates arranged between the corresponding one of the lines BL1 and BL2 and the line SL.</p> |
