SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

摘要

PROBLEM TO BE SOLVED: To avoid forming voids in the side face of an AlCu film for suppressing wiring resistance increase and reduction in reliability, in forming an undoped silicate glass(USG) film on a Ti/TiN film. SOLUTION: A Ti/TiN film 15 is removed using a resist film as a mask. One side face of this film 15 is retreated 5-20% of the resist film width through CDE(chemical dry etching) using a mixed gas contg. Cl2, Ar and CF4, and an AlCu film 14 and a Ti/TiN film 13 are etched through a mask using the resist film by RIE(reactive ion etching). Thus the AlCu film 14 width is made narrower than the width of the Ti/TiN film 13, and the Ti/TiN film 15 width is made narrower than the width of the film 14.