| 摘要 |
PROBLEM TO BE SOLVED: To maintain the overall performance of a device by increasing the operating stability of memory cells and suppressing power consumption due to leakage currents and securing operating margins of sense amplifiers in a static memory(SRAM) macro which is to be used in a low-voltage driven CMOS semiconductor device. SOLUTION: In a low-voltage driven CMOS semiconductor device, transistors whose thresholds are high are applied to an SRAM cell 2 and they are made to be driven with a high power source voltage. On the other hand, transistors whose thresholds are lower than those of transistors constituting the memory cell 2 are applied to peripheral circuits of an address decoder 1 and a read/write circuit 3 or the like and they are made to be driven with a low power source voltage. Thus, the overall power consumption of the semiconductor device is reduced while securing the operating margin of the SRAM cell 2 and enabling the cell 2 to perform a stable operation. |
