| 摘要 |
PROBLEM TO BE SOLVED: To effectively reduce the warpages of a substrate in the most realistic way, without deteriorating the strength of the substrate or requiring additional processes. SOLUTION: A compound semiconductor device is provided with a buffer layer 2 and a doping layer 3, both of which are composed of compound semiconductors and successively laminated upon an Si substrate 1 in prescribed shapes, and electrodes 9 provided on the doping layer 3. The Thicknesses of the compound semiconductor layers 2 and 3 are adjusted to 1/100 or higher of that of the Si substrate 1, and a first dielectric layer 7 having a stress of 200 MPa or higher is provided on the semiconductor layers 2 and 3.
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