| 摘要 |
PROBLEM TO BE SOLVED: To secure an ideal track of an ion beam and to realize high focusing accuracy by controlling a potential distribution expanding in an ion flow passing region in an aperture for extracting a single ion, preventing ion flow pass, and extracting the single ion. SOLUTION: When an ion charge amount is q and ion beam kinetic energy is qVi, a pulse voltage V applied by a power supply means 20 is set as V>Vi and thereby focused ion beam 1 is repulsed and reversed. The width and thickness of an ion flow passing region 5 in an aperture 21 for extracting a single ion are selected so that the single ion 48 is extracted at V=0. Thus, the power supply means 20 applies the pulse voltage V to the aperture 21, the width and thickness of a depletion layer occurring in the ion flow passing region 5 are adjusted by electric field control to perform extraction of the single ion 48 and prevention of the ion flow pass. Therefore, the ion beam does not deviate from an ideal track, high focusing accuracy can be realized, and single ion injection into a nanometer region can be performed.
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