ND:YVO4 CRYSTALLINE ANTIREFLECTION FILM FOR SECOND HARMONIC GENERATION

摘要

PURPOSE: A Nd:YVO4 crystalline antireflection film for second harmonic generation is provided to increase the power of second harmonic by forming antireflection films on both sides of the Nd:YVO4 crystal so as to reduce the reflection ratio to a basic wave, second harmonic and semiconductor laser wavelength. CONSTITUTION: The Nd:YVO4 crystalline antireflection film is constructed by alternately laminating a dielectric layer of high refractive index and a dielectric layer of low refractive index on both sides of Nd:YVO4 crystal so that reflection to semiconductor laser wavelength of a basic wave polarized toward the a-axis of the Nd:YVO4 crystal and second harmonic can be prevented. It is preferable that the dielectric layer of high refractive index is ZrO2 having refractive index of 2.2 at 532nm and the dielectric layer of low refractive index is SiO2 having refractive index of about 1.48 at 532nm.